| PART |
Description |
Maker |
| BR100_03LLD BR100 BR103LLD BR100LLD BR103 |
Silicon Bi-directional Trigger Device
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BR100 |
(BR100 / BR103) Silicon Bi-directional Trigger Device
|
Philips
|
| DB-4 |
Bi-directional trigger diodes
|
Leshan Radio Company
|
| D40P D32P D60P D35P D50P |
BI-DIRECTIONAL TRIGGER DIACS
|
EIC[EIC discrete Semiconductors]
|
| LLDB310 |
150mW Bi-directional Trigger Diode
|
Taiwan Semiconductor Company, Ltd
|
| KELDB3 |
DO-35 Hermetically Sealed Glass BI-directional Trigger Diode
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| MC74HC14A MC74HC14AD MC74HC14ADR2 MC74HC14ADT MC74 |
Hex Schmitt-Trigger High-Performance Silicon-Gate CMOS
Hex Schmitt-Trigger Inverter
|
ONSEMI[ON Semiconductor]
|
| 87310B 87300C 87300D 87301B 87300B 87301D 87301C 8 |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz
87300C Coaxial Directional Coupler, 1 GHz to 26.5 GHz
87300D Coaxial Directional Coupler, 6 to 26.5 GHz
87301B Coaxial Directional Coupler, 10 to 46 GHz
87300B Coaxial Directional Coupler, 1 GHz to 20 GHz
87301D Coaxial Directional Coupler, 1 GHz to 40 GHz
87301C Coaxial Directional Coupler, 10 to 50 GHz
87301E Coaxial Directional Coupler, 2 GHz to 50 GHz
|
Agilent (Hewlett-Packard)
|
| KPY32-R Q62705-K150 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SM6J45A SM6G45 SM6G45A SM6J45 |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TO-220 .75H .57W .5D W/MTG TAB
Heat Sink; Package/Case:TO-220; Body Material:Aluminum; Thermal Resistance:27.3 C/W; Color:Black; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Size/Dimensions:0.750H x 0.500W"
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| FKPF12N60 FKPF12N80 |
Bi-Directional Triode Thyristor Planar Silicon
|
FAIRCHILD[Fairchild Semiconductor]
|
| PA10SD |
1.0 Amp Silicon Controlled Rectifiers Sensitive gate trigger current.
|
First Components International
|
